PART |
Description |
Maker |
IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH02SG120 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDH06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDD05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDD09SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH04SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|