PART |
Description |
Maker |
IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDT12S60C-08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies A...
|
IDT04S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
IDH06SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
IDH06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDB06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
IDC04S60C |
2nd generation thinQ SiC Schottky Diode 2nd generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
IDD08SG60C IDD08SG60C-13 |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies A...
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