| PART |
Description |
Maker |
| SSR05C080 SSR05C120 SSR05C100 SH0067A SSR10C120S.5 |
10 A / 1200 V Schottky Silicon Carbide Rectifier
|
Solid States Devices, Inc
Solid States Devices, I...
|
| SML05SC12D3A.GRPB |
5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SEMELAB LTD
|
| STPSC10H12-Y |
Automotive grade 1200 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE
1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SDR1212CTJ SDR1210CTJ SDR1212DRJ |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| MUR10120 MUR10120E MUR10120E_D ON2728 |
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS 10 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system
|
Micro Commercial Components, Corp.
ON Semi
MOTOROLA[Motorola, Inc]
|
| SDR4512M |
45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| CS48-35N CS48-35D CS48-35M CS48-35P CS48-35PB CS48 |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-48
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-48
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
|
