| PART |
Description |
Maker |
| 2075SERIES 2075-2000 2075-1000 2075-300 2075-3000 |
Delay 5000 /-100 ns, fixed high B.W. line Tr
Delay 500 /-20 ns, fixed high B.W. line Tr
Delay 4000 /-80 ns, fixed high B.W. line Tr
Delay 3000 /-60 ns, fixed high B.W. line Tr
Delay 300 /-20 ns, fixed high B.W. line Tr
Delay 1000 /-20 ns, fixed high B.W. line Tr
Delay 2000 /-40 ns, fixed high B.W. line Tr
FIXED HIGH B.W. DELAY LINE TR 1ns
|
Data Delay Devices Inc
|
| MOX-200001003BER MOX-200001003CER MOX-200001003DER |
0.25 Watt and 0.5 Watt Precision Thick Film Axial Terminal High Voltage/High Resistance
|
Ohmite Mfg. Co.
|
| MB511 |
1GHz HIGH SPEED PRESCALER
|
FUJITSU
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MAX2058 MAX2058ETL MAX2058ETLT MAX2058EVKIT |
700MHz to 1200MHz High-Linearity, SPI-Controlled DVGA with Integrated Loopback Mixer
|
MAXIM - Dallas Semiconductor
|
| MAX2058 |
700MHz to 1200MHz High-Linearity, SPI-Controlled DVGA with Integrated Loopback Mixer
|
Maxim Integrated Products, Inc.
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2213UK D2213 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
