| PART |
Description |
Maker |
| B120NH03L 2SA1020G 2SA1020RLRA 2SA1020RLRAG 2SA177 |
N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion
One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS
PNP Silicon General Purpose Amplifier Transistor
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
Low-Voltage 1.8/2.5/3.3 V 8-Bit Transceiver
Switching Diode
MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Low?Voltage 1.8/2.5/3.3V 16?Bit Transparent Latch
8?Bit Bus Switch
Low?Voltage 1.8/2.5/3.3V 16?Bit Transceiver
|
STMICROELECTRONICS
ZETEX
ONSEMI[ON Semiconductor]
|
| MMBT3906LT1 MMBT3906LT3G MMBT3906LT1G MMBT3906LT3 |
Small Signal GP PNP
General Purpose Transistor(PNP Silicon)
|
ONSEMI[ON Semiconductor]
|
| 2SB1625 2SB1625P |
6 A, 110 V, PNP, Si, POWER TRANSISTOR TO-3P, 3 PIN
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)
Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)
|
Sanken electric
|
| BC807-40LT1 BC807-40LT3G BC807-16LT1 BC807-16LT3 B |
General Purpose Transistors(PNP Silicon) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Silicon Transistor Plastic
|
ONSEMI[ON Semiconductor]
|
| HN1A01FU E001966 |
Silicon PNP Transistor
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
N/A
Toshiba Semiconductor
|
| PF90-22 PF90-13 PF90-19 PF90-10 PF90-17 PF90-28 PF |
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 36000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 25000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 120000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 60000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1750 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1750000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 750000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
|
| 2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon PNP Transistor
Silicon PNP triple diffusion planar type
|
Panasonic Corporation
|
| 1N482B FTSO5139 FTSO5138 1N462A |
General purpose low leakage diode. Working inverse voltage 36V.
PNP small signal general purpose amplifier & switch.
PNP low level amplifier.
General purpose high conductance diode. Working inverse voltage 60V.
|
Fairchild Semiconductor
|
| LAL03TB68020 LAL04TB68020 LAL05TB68020 LAN02TB6802 |
1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.39 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3900 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.56 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.33 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
|
Taiyo Yuden Co., Ltd.
TAIYO YUDEN CO LTD
|
| LBC858CWT1 LBC856AWT1 LBC856BWT1 LBC857AWT1 LBC857 |
General Purpose Transistors PNP Silicon
|
LRC[Leshan Radio Company]
|
|
