PART |
Description |
Maker |
BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
WP7104F3C |
3 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
|
AP2012F3CT |
1.2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
KINGBRIGHT CORP
|
TSIP4401AS12 TSIP4401AS21 TSIP4401AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 925 nm
|
Atmel, Corp.
|
5202CS12Z 5202CS21 |
5 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN TEMIC SEMICONDUCTORS
|
TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
TSHA4400AS12 TSHA4400AS12Z |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY TELEFUNKEN TEMIC SEMICONDUCTORS
|
XZTHI54W |
1.3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
SUNLED COMPANY LTD
|
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