| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5313EH NX5313EK NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| TAT6254B |
Low Noise High Gain FTTH / RFoG Amplifier
|
TriQuint Semiconductor
|
| ZVN4525G ZVN4525GTA ZVN4525GTC |
PNP 30CM DIFF W/ADJ RoHS Compliant: Yes 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-CHANNEL ENHANCEMENT MODE MOSFET 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel MOSFET
|
Zetex Semiconductor PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| DS1865T DS186509 DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
http://
Maxim Integrated Products
Maxim Integrated Produc...
|
| FTM-9412P-F20 FTM-9412P-F20G FTM-9412P-F20I FTM-94 |
SFF GE-PON PX20 ONU Transceiver
|
Source Photonics, Inc.
|
| DS1865T_TR DS1865 DS1865T_ |
PON Triplexer Control and Monitoring Circuit
|
MAXIM[Maxim Integrated Products]
|
| VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
| NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|
