| PART |
Description |
Maker |
| PRHMB200A6A1 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| IRKHF200-02GP IRKKF200-06HP IRKHF200-06GP IRKHF200 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|600V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|200V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|400V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|400V V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|200V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|400V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|600V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|400V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|200V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|800V V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.2KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.2KV五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR|DUAL|CC|600V V(RRM)|200A I(T) 晶闸管模块|可控硅|双|消委会| 600V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|200A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|CC|200V V(RRM)|200A I(T) 晶闸管模块|倍增|消委会| 200伏五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|SCR DOUBLER|800V V(RRM)|200A I(T) 晶闸管模块|可控硅倍增器| 800V的五（无线资源管理）| 200安培我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|200A I(T)
THYRISTOR MODULE|DOUBLER|CA|1KV V(RRM)|200A I(T)
|
Microchip Technology, Inc.
STMicroelectronics N.V.
IXYS, Corp.
Glenair, Inc.
L-com, Inc.
Powerex, Inc.
|
| FMG1G200US60H |
600V, 200A IGBT Module (Molding Type)
|
Fairchild Semiconductor
|
| PP200T060 |
POW-R-PAK 200A / 600V 3 phase IGBT Assembly
|
POWEREX[Powerex Power Semiconductors]
|
| SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7
600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| 200HFR80PV 200HF 200HF120MSV 200HF120MV 200HF120PB |
From old datasheet system
STANDARD RECOVERY DIODES Stud Version
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1200V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
IRF[International Rectifier]
|
| FMG2G200US60 |
600V, 200A IGBT Module (Molding Type)
Molding Type Module
|
Fairchild Semiconductor
|
| BUK475-100A BUK475-100B |
PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
PowerMOS transistor Isolated version of BUK455-100A/B
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 203DNQ100 203DNQ080 |
100V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
80V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
From old datasheet system
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| 203CNQ100R 203CNQ080 203CNQ080R 203CNQ100 203CNQ10 |
SCHOTTKY RECTIFIER
100V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
100V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
SCHOTTKYRECTIFIER
SCHOTTKY RECTIFIER 肖特基整流器
100 A, 100 V, SILICON, RECTIFIER DIODE, TO-244AB
|
IRF[International Rectifier]
InternationalRectifier
International Rectifier, Corp.
|
