| PART |
Description |
Maker |
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| HM514280ALZ-7 HM514280ALTT-7 HM514280ALJ-10 |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
256K X 18 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| IS41C16257 IS41C16257-35K IS41C16257-35KI IS41C162 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| TC511000AZL-70 TC511000BZL-60 TC514256AZL-70 TC514 |
1M X 1 FAST PAGE DRAM, 70 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
1M X 1 FAST PAGE DRAM, 60 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
256K X 4 FAST PAGE DRAM, 70 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
SIEMENS AG
|
| IS41LV16257A-35KL |
256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
INTEGRATED SILICON SOLUTION INC
|
| TC514256BZL-60 |
256K X 4 FAST PAGE DRAM, 60 ns, PZIP19 0.400 INCH, PLASTIC, ZIP-20/19
|
SIEMENS AG
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
| V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http://
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V53C104A V53C104AK V53C104AK-100 V53C104AK-80 V53C |
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
