| PART |
Description |
Maker |
| IS61SPS25632D IS61SPS25632T IS61SPS25636T IS61LPS5 |
256Kx32 Synchronous Pipelined Static RAM
|
ISSI
|
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61LF25632 IS61LF25636 IS61LF51218 |
(IS61LF25632 / IS61LF25636 / IS61LF51218) 256Kx32 Synchronous Flow-through Static RAM
|
ISSI
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS8161Z32D-200I GS8161Z32D-166I GS8161Z32D-133I GS |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
7ns 166MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
7.5ns 150MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
8.5ns 133MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
5.5ns 250MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6ns 225MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A403609A K7A401809A K7A403609B |
256K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IC61SP12836 IC61SP12832 IC61SP12832-166B IC61SP128 |
100MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM
128K x 32 Pipelined SyncBurst SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT709149S 709149_DS_24983 IDT709149S8PF IDT709149 |
4K x 9 Sync, Dual-Port RAM, Pipelined
HIGH-SPEED 36K (4K x 9-BIT) SYNCHRONOUS PIPELINED DUAL-PORT SRAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IS61S6432 IS61S6432-7TQ IS61S6432-6PQ IS61S6432-6P |
From old datasheet system
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT70T9359L7PF IDT70T9359L7PFI IDT70T9359L12PF IDT |
From old datasheet system
HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
4K x 18 Sync, 2.5V Dual-Port RAM, PipeLined Flow/Through
|
IDT[Integrated Device Technology]
|
