| PART |
Description |
Maker |
| P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32
16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52
128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32
64K X 1 STANDARD SRAM, 10 ns, PDIP22
1K X 4 STANDARD SRAM, 10 ns, PDIP18
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
Performance Semiconductor, Corp.
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
PYRAMID SEMICONDUCTOR CORP
|
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| TIGA6S4000I-20 TIGA7S4000M-35 TIGA2S4000M-20 |
128K X 32 STANDARD SRAM, 20 ns, CQCC68
128K X 32 STANDARD SRAM, 35 ns, CQFP68
128K X 32 STANDARD SRAM, 20 ns, CDMA66
|
FORCE TECHNOLOGIES LTD
|
| KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围
128K X 8 STANDARD SRAM, 20 ns, PDSO32
128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GVT71128E36B-7 GVT71128E36T-7 |
128K X 36 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
128K X 36 STANDARD SRAM, 7.5 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
|
Cypress Semiconductor, Corp.
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MT5C1009SOJ-35E/XT MT5C1009SOJ-55E/XT MT5C1009SOJ- |
128K X 8 STANDARD SRAM, 35 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 55 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 70
128K X 8 STANDARD SRAM, 35 ns, CDFP32
|
Micross Components
Austin Semiconductor, Inc
|
| M5M51008AP-12L M5M51008AFP-12L M5M51008AFP-10LL |
128K X 8 STANDARD SRAM, 120 ns, PDIP32
128K X 8 STANDARD SRAM, 120 ns, PDSO32
128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
|
| R1LP0108ESR-7SR R1LP0108ESR-5SI R1LP0108ESA-7SI R1 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 8 X 20 MM, PLASTIC, REVERSE BEND, TSOP-32
128K X 8 STANDARD SRAM, 55 ns, PDSO32
|
California Micro Devices Corporation
|
| IDT7MMV4101 IDT7MMV4101S10BG IDT7MMV4101S10BGI IDT |
128K x 24 Three Megabit 3.3V CMOS Static RAM 128K × 24.3V的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 128K X 24 STANDARD SRAM, 15 ns, PBGA119
Octal Buffers/Drivers With 3-State Outputs 20-PDIP -40 to 85 128K X 24 STANDARD SRAM, 12 ns, PBGA119
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| MSM8128GL-85 MSM8128GLI-85 MSM8128GLMB-85 MSM8128W |
128K X 8 STANDARD SRAM, 85 ns, CDFP32
128K X 8 STANDARD SRAM, 85 ns, CQCC32
|
Twilight Technology, Inc.
Venkel, Ltd.
|
|
