| PART |
Description |
Maker |
| MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
|
Micron Technology, Inc.
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
| WEDPN16M64VR-125BC WEDPN16M64VR-100BM WEDPN16M64VR |
125MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
100MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
133MHz; 3.3V power supply; 16M x 64 registered synchronous DRAM
|
White Electronic Designs
|
| K4M56163PG K4M56163PG-BC75 K4M56163PG-BC90 K4M5616 |
4M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Ironwood Electronics
Bel Fuse, Inc.
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
| IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
|
| HYB25L256160AC-7.5 HYB25L256160AF-7.5 |
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54
|
Infineon Technologies AG
|
| MT48LC16M8A2P-6ALG MT48LC16M8A2P-6AG |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| W9825G6CH-6 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
