PART |
Description |
Maker |
TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TLP351 |
Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
|
Toshiba Semiconductor
|
APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10086BLC APT10086SLC |
POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
|
APT10050LLC APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm Power MOS VITM is a new generation of low gate charge, high voltage
|
Advanced Power Technology Ltd.
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
GT5J301 GT5J301_07 GT5J30107 |
GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14 HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V. Philips
|
APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|