| PART |
Description |
Maker |
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| TPC8009-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
|
Toshiba Semiconductor
Toshiba Corporation
|
| MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
| BC857CW BC860CW BC856AW BC857BW BC859W BC856BW BC8 |
PNP Silicon AF Transistors
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-PDIP -55 to 125
High Speed CMOS Logic Triple 3-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 自动对焦进步党硅晶体
|
INFINEON[Infineon Technologies AG]
|
| KSC2335F KSC2335 |
High Speed/ High Voltage Switching
High Speed, High Voltage Switching
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2349 1034 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
From old datasheet system
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| BAS20 BAS19 BAS21 Q62702-A95 Q62702-A113 Q62702-A7 |
Silicon Switching Diodes (High-speed/ high-voltage switch)
From old datasheet system
SILICON SWITCHING DIODES (HIGH-SPEED, HIGH-VOLTAGE SWITCH)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs
Feature
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| C180 C180D |
High Power Silicon Controlled Rectifier
|
New Jersey Semi-Conductor P...
|
