PART |
Description |
Maker |
A42 |
Epitaxial planar die construction. Ideal for medium power amplification and switching. NPN High Voltage Transistors
|
TY Semiconductor Co., L... TY Semicondutor
|
PTMA180402M11 |
Wideband RF LDMOS Integrated Power Amplifi er 40 W, 28 V, 1800 . 2100 MHz
|
Infineon Technologies AG
|
HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
IRF6609PBF IRF6609PBF-15 |
DirectFETPower MOSFET Ideal for CPU Core DC-DC Converters
|
International Rectifier
|
2SA1900 A5800745 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) From old datasheet system Medium Power Transistor (-50V, -1A)
|
ROHM
|
LTC3455 LTC4052 LTC4053 LTC4054 LTC4411 LTC4412 LT |
USB Power Manager with Ideal Diode Controller and Li-Ion Charger
|
Linear Technology
|
SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving From old datasheet system Transceiver Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
|
INFINEON[Infineon Technologies AG]
|
LTC4085-3-15 LTC4085-4-15 |
USB Power Manager with Ideal Diode Controller and 3.95V Li-Ion Charger
|
Linear Technology
|
IRF6613PBF IRF6613PBF-15 |
23 A, 40 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET Ideal for CPU Core DC-DC Converters
|
International Rectifier
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|