PART |
Description |
Maker |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
KSD1691 KSD1691OS KSD1691YS KSD1691GS KSD1691YSTST |
NPN Epitaxial Silicon Transistor Low Collector-Emtter Saturation Voltage & Large Collector Current Feature
|
Fairchild Semiconductor
|
FZT549 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
FZT591 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|
DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon) From old datasheet system PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor Siemens Semiconductor Group
|
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC Corp. NEC[NEC]
|