PART |
Description |
Maker |
RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
STL35NF3LL |
N-CHANNEL 30V 0.0055 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET MOSFET N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT LOW GATE CHARGE STripFET MOSFET N-CHANNEL 30V - 0.0055ohm - 35A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FDMS8672S |
N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
STD35NF3LL07 STD35NF3LLT4 D35NF3LL STD35NF3LL |
N-channel 30V - 0.014ohm - 35A - DPAK STripFET TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
7MBR35SD120 |
PIM/Built-in converter with thyristor and brake (S series) 1200V / 35A / PIM
|
FUJI[Fuji Electric]
|
IRFR3709ZPBF IRFU3709ZPBF IRFR3709ZTRR IRFR3709ZTR |
30 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mヘ , Qg = 17nC ) HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 6.5mΩ , Qg = 17nC ) High Frequency Synchronous Buck Converters for Computer Processor Power
|
International Rectifier
|
RJK0451DPB-00-J5 RJK0451DPB13 |
40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
DTD743XE DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|