PART |
Description |
Maker |
CHT5338ZPT |
NPN Silicon Transisto r
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Chenmko Enterprise Co. Ltd.
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. Silicon Power Rectifier Diode, 25 Amp Silicon Power Rectifier Diode 25 Amp Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
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BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http:// ONSEMI[ON Semiconductor]
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
|
BDX53B BD53C BDX54C ON0205 BDX53C BDX54B |
From old datasheet system 8 AMPERE POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80-100 VOLTS 65 WATTS
|
Motorola Inc MOTOROLA[Motorola Inc] Motorola, Inc ON Semiconductor
|
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC[NEC]
|
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 Silicon Power Rectifier Diode / 12 Amp Silicon Power Rectifier Diode 12 Amp Silicon Power Rectifier Diode, 12 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
2SB1431 |
Silicon power transistor From old datasheet system PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
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FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
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