| PART |
Description |
Maker |
| QLF063D-P120 |
660 nm 120mW FP LASER TO-CAN
|
QD Laser
|
| SLD301B |
Block-type 100mW High Power Laser Diode
|
Sony Corporation
|
| HMC616LP310 616LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
175 MHz - 660 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| TS482 TS482ID TS482IDT TS482IQT TS482IST |
100mW STEREO HEADPHONE AMPLIFIER
|
STMICROELECTRONICS[STMicroelectronics]
|
| APA2718HAI-TRG APA2178 |
100mW Stereo Cap-Free Headphone Driver
|
Anpec Electronics Coropration
|
| Q62702P5053 |
GaAlAs-Lumineszenzdiode (660 nm)
|
OSRAM GmbH
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| RF2423 |
100mW SPREAD-SPECTRUM TRANSMITTER IC TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PDSO16
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS91 |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MAX3946ETG MAX394611 |
1Gbps to 11.3Gbps, SFP Laser Driver with Laser Impedance Mismatch Tolerance
|
Maxim Integrated Products
|
| VT5376V032 |
Ultra-low power laser motion sensor for laser mouse applications
|
STMicroelectronics
|
| M02066-21 M02066-EVME |
Drivers, 3.3V Laser Driver IC for Applications to 3Gbps
Optical evaluation board, TO-can laser
|
Mindspeed Technologies
|
