PART |
Description |
Maker |
S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
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S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
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Hamamatsu Photonics K.K.
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S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
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Hamamatsu Photonics
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S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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Hamamatsu Photonics K.K.
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CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC C |
CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100 9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S) MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
FDS3992 |
N-Channel PowerTrench MOSFET 100V, 4.5A, 62mз 4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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STH130N10F3-2 STFI130N10F3 STF130N10F3 |
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package N-channel 100 V, 7.8 mΩ typ., 120 A STripFET?III Power MOSFET in TO-220FP, I2PAKFP, H2PAK-2 and TO-220 packages N-channel 100 V, 8 mOhm typ., 46 A STripFET(TM) Power MOSFET in I2PAKFP package
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STMicroelectronics ST Microelectronics
|
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. VISHAY INTERTECHNOLOGY INC
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STP9N60M2 STD9N60M2 |
Extremely low gate charge N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
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STMicroelectronics ST Microelectronics
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STW12N120K5 STH12N120K5-2 |
N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected SuperMESH(TM) 5 Power MOSFET in H2PAK-2 package
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ST Microelectronics
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