| PART |
Description |
Maker |
| AM29DL642G90MDI AM29DL642G AM29DL642G70I AM29DL642 |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo
|
AMD[Advanced Micro Devices]
|
| AM29DL642G70MDI AM29DL642G90MDI AM29DL642G90I |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo
|
Advanced Micro Devices, Inc.
|
| MX25L6475EM2I10G MX25L6475EZNI10G |
64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| W25Q64DWSFIG W25Q64DWZEIG W25Q64DWZEIP W25Q64DWSFI |
1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| W25Q64CVSTIG W25Q64CVTBIG W25Q64CVDAIG W25Q64CVTCI |
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| MX29LV320MTXI-70G MX29LV641MLTI-90 MX29LV640MLTC-9 |
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 6400位单电压3V时仅均匀部门闪存
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M (4M x 16) BIT 64M号（4米16）位
AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R
320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
http://
|
| SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
