| PART |
Description |
Maker |
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| NPT2020 NPT2020-SMB2 NPT2020-15 |
GaN Wideband Transistor 48 V, 50 W
|
M/A-COM Technology Solu...
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| NPT2022 NPT2022-14 |
GaN Wideband Transistor 48 V, 100 W
|
M/A-COM Technology Solu...
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
50MHz TO 1000MHz, 15W GaN WIDEBAND
|
RF Micro Devices
|
| MRF6V2010N |
Designed primarily for pulsed wideband large - signal output and driver
|
Motorola Semiconductor Products
|
| PHL2143 PH1214-3L |
Radar Pulsed Power Transistor3W
Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0％的责任1日至1号吉
|
Tyco Electronics
Velleman, Inc.
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
