| PART |
Description |
Maker |
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| 45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET HEXFET庐 Power MOSFET HEXFET? Power MOSFET 42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Ultra Low On-Resistance
|
International Rectifier List of Unclassifed Man...
|
| POWER-32D POWER-22D POWER-12D |
(POWER-12D/-22D/-32D) Low power off-line switching power supply control chip
|
Xin Ke
|
| TDA16846 TDA16847 TDA1684603 TDA16846-2 TDA16847-2 |
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor
|
Infineon Technologies AG
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| GSM11 |
Low Power Medical Power Supplies 11 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
| 2SD1272 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|