| PART |
Description |
Maker |
| IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset RELAY 024VDC 01A DPDT-XX FORM:2C UC Bi-Lobe Standard Metal Shell Nano Offset Connector Low Power 5V/3.0V P Reset Low Power/ 5V/ P Reset Low Power, 5V, 楼矛P Reset Low Power 5V P Reset Low Power, 5V, P Reset Low Power, 5V, μP Reset 4.375V power reset
|
IMP INC. IMP Inc IMP[IMP, Inc] IMP[IMP Inc]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
| 43045-1208 43045-1806 43045-1608 43045-2406 43045- |
Header; No. of Contacts:12; Pitch Spacing:3mm; No. of Rows:2; Series:Micro-Fit; Connector Body Material:Polymer; Mounting Type:PC Board; Terminal Type:Right Angle Surface Mount RoHS Compliant: Yes POWER CONNECTOR 430451806 POWER CONNECTOR 430451608 POWER CONNECTOR Microfit 3.0 RA SMT/Clip DR Tin 24 Ckt POWER CONNECTOR 430450206 POWER CONNECTOR
|
Molex, Inc.
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| FLS2100XS |
The FLS-XS series of general lighting power controllers includes highly integrated power switches for medium - to high-power lumens applications.
|
List of Unclassifed Man...
|
| 2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD2659 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SC3942 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|