| PART |
Description |
Maker |
| KMZ10A1 |
Magnetic field sensor MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.6-0.62mT, RECTANGULAR, THROUGH HOLE MOUNT
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KMZ11B1 |
Magnetic field sensor MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -25-25mT, RECTANGULAR, SURFACE MOUNT
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| XC5215-6HQ240C XC5215-6HQ208C XC5200-4PC84C XC5206 |
TV 6C 6#12 SKT RECP
TV 6C 6#220 PIN RECP FPGA, 120 CLBS, 4000 GATES, 83 MHz, CPGA156
CTV 6C 6#22D PIN RECP 现场可编程门阵列
Field Programmable Gate Arrays 现场可编程门阵列
Field Programmable Gate Arrays FPGA, 64 CLBS, 2000 GATES, 10 MHz, PQFP64
ARTESYN PART 现场可编程门阵列
Field Programmable Gate Arrays FPGA, 120 CLBS, 4000 GATES, 83 MHz, PQFP100
Field Programmable Gate Arrays FPGA, 484 CLBS, 15000 GATES, 83 MHz, PQFP208
ECONOLINE: RZ - 1kVDC Isolation- SMD Package Styles- 5V, 12V and 15V Output- UL94V-0 Package Material- No Heatsink Required- No Extern. Components- Toroidal Magnetics- Efficiency to 62% FPGA, 324 CLBS, 10000 GATES, 83 MHz, PQFP208
Field Programmable Gate Arrays FPGA, 484 CLBS, 15000 GATES, 83 MHz, PQFP160
Field Programmable Gate Arrays FPGA, 324 CLBS, 10000 GATES, 83 MHz, CPGA223
Low-cost, register/latch rich, SRAM based
|
Xilinx, Inc.
XILINX INC
|
| MSM514223B |
262,263-Word x 4-Bit Field Memory
262263-Word x 4-Bit Field Memory
From old datasheet system
|
OKI electronic components
OKI[OKI electronic componets]
|
| MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system
262214-Word x 8-Bit Field Memory
262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| AL422 AL422B AL422V3 AL422V5 |
AL422 3M-Bits FIFO Field Memory
AL422 3M-Bits FIFO Field Memory
Single-Phase High Efficiency DC/DC Controller with On-Chip Gate Drivers for Intel Mobile CPUs
|
List of Unclassifed Manufacturers
|
| XCV200 XCV100 XCV600 DS003-1 XCV1000 XCV400 XCV800 |
Virtex 2.5 V Field Programmable Gate Arrays
Virtex?/a> 2.5 V Field Programmable Gate Arrays
Fast, high-density Field-Programmable Gate Arrays
|
Xilinx, Inc
http://
|
| 2SK231202 2SK231207 2SK2312 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−?MOSV)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−ば-MOSV)
|
Toshiba Semiconductor
|
