| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| 10-FZ06NBA084FP-M306L48 |
ultrafast IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| SML05SC06D3B SML05SC06D3A |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
