| PART |
Description |
Maker |
| QVS212CG010BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG020BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| QVS212CG0R6BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CPH3004 |
Ultrahigh-Frequency Transistors
High-Frequency Medium-Power Amplifier Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| QVS212CG180JDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NE664M04-T2 NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| HSG2001 HSG2001VF |
SiGe NPN Epitaxial High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
