PART |
Description |
Maker |
RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag 80m惟, 1.5A/0.6A High-Side Power Switches with Flag 80m楼?, 1.5A/0.6A High-Side Power Switches with Flag 80mヘ, 1.5A/0.6A High-Side Power Switches with Flag User Programmable Micro-Power Voltage Detectors
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Richtek Technology Corporation
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TDA4817 TDA4817G Q67000-A8299 Q67000-A8298 |
PFC IC for High Power Factor and Acti... From old datasheet system Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 0.5 A POWER FACTOR CONTROLLER, PDIP8 Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 功率因数控制器IC,用于高功率因数,有源谐波滤
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
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USHA India LTD
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WSLT4026-15 |
Power Metal Strip? Resistors, High Temperature (275 °C),High Power, Low Value, Surface Mount, 4-Terminal
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Vishay Siliconix
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IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters HEXFET? Power MOSFET
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IRF[International Rectifier]
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IPS401-05I-SO IPS401-05C-D IPS401-05C-SO IPS401-05 |
High Efficiency, High Power Factor, Universal High Brightness WHITE LED Controller
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List of Unclassifed Manufacturers
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MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
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ON Semiconductor
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BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
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ON Semiconductor
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AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. Power Amplifiers KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module
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Anadigics Inc ANADIGICS, Inc
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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