PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
V23826-K305-C363 V23826-K305-C353 V23826-K305-C373 |
Multimode 850 nm 1.0625 Gbit/s Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver 多模850纳米1.0625 Gbit / s的光纤通道1.3千兆以太网收发器1x9
|
Infineon Technologies AG
|
V23815-U1306-M136 V23814-U1306-M136 RXAC16GBIT/S T |
Parallel Optical Links (PAROLI) - PAROLITx, AC, 1,6 Gbit/s, Increased power budget Parallel Optical Links (PAROLI) - PAROLI?Rx, AC, 1,6 Gbit/s, Increased power budget PAROLI Tx AC/ 1.6 Gbit/s PAROLI Tx AC, 1.6 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
V23848-M15-C56 |
iSFP-Intelligent Small Form-factor Pluggable 1.25 Gigabit Ethernet 2.125/1.0625 Gbit/s Fibre Channel Single Mode 1310 nm Transceiver with LC Connector iSFP -智能小型可插1.25千兆以太.125/1.0625 Gbit / s的与LC连接器单模光纤通道收发1310纳米
|
Infineon Technologies AG
|
H27U8G8T2B |
8 Gbit (1024 M x 8 bit) NAND Flash
|
Hynix
|
TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba. Toshiba Semiconductor
|
72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72 1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4,银
|
http:// Maxwell Technologies, Inc
|