| PART |
Description |
Maker |
| MA650.ST.AB.003.DZ |
Advanced RF Design and Materials
|
Taoglas antenna solutio...
|
| MA650.A.AB.002 |
Advanced RF Design and Materials
|
Taoglas antenna solutio...
|
| BUL63A |
ADVANCED DISTRIBUTED BASE DESIGN
|
Seme LAB
|
| RU3065L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
|
| BUL74B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL56B BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL52B BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| EVAL6393FB |
Low voltage full bridge reference design board featuring L6393 advanced high-voltage gate driver
|
ST Microelectronics
|
