| PART |
Description |
Maker |
| STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package
Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics
STMicroelectronics
|
| STH240N10F7-2 STH240N10F7-6 |
Ultra low on-resistance
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IXTK180N15 |
High Current MegaMOSTMFET 180 A, 150 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
| IRFP4110PBF |
High Efficiency Synchronous Rectification in SMPS
HEXFET Power MOSFET
180 A, 100 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
International Rectifier
|
| IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
| STH310N10F7-2 STH310N10F7-6 |
N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE Power MOSFET in H2PAK-2 and H2PAK-6 packages
|
STMicroelectronics
|
| 0601751042 |
ANGLE GRINDER GWS20-180 230V 角向磨光机GWS20 - 180 230
|
TE Connectivity, Ltd.
|
| BSS84AK215 |
50 V, 180 mA P-channel Trench MOSFET
|
NXP Semiconductors
|
