| PART |
Description |
Maker |
| ATF1516AS-10UC192 ATF1516AS-15UC192 ATF1516ASL-20U |
High performance EE-based CPDL, 70 MHz
High performance EE-based CPDL, 100 MHz
High Performance EE-Based CPLD EE PLD, 20 ns, PPGA192
High Performance EE-Based CPLD EE PLD, 20 ns, PQFP160
ER 4C 4#8 SKT RECP LINE
320 x 240 pixel format, LED or CFL Backlight
OSC 5V SMT 7X5 CMOS PROGRM
KVM INTERCONNECT MODULE CABLE
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| OVM9724-RADA OVM9724-RYDA |
Wearable Devices
|
OmniVision Technologies...
|
| OV6946 |
Wearable Devices
|
OmniVision Technologies...
|
| STEVAL-TLL006V2 |
New high-power LED driver demo board for single flash with IC interface based on STCF06 (with motherboard based on uPSD)
|
ST Microelectronics
|
| ISL6613BIB-T ISL6612BIRZ-T ISL6612BIBZ |
TVS UNIDIRECT 1500W 33V SMC 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10
7-Bit Bus Interfaces With 3-State Outputs 20-TSSOP 0 to 70 3 A HALF BRDG BASED MOSFET DRIVER, PDSO8
|
Intersil, Corp.
|
| S71GS256 S71GS128NB0 S71GS256NC0 S71GS256NB0BFWAK0 |
128N based MCPs SPECIALTY MEMORY CIRCUIT, PBGA84
128N based MCPs 基于MCP28N
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| PN531 |
μC based Transmission module
レC based Transmission module
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.5 to 7.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
NXP Semiconductors N.V.
|
| TDA21201 TDA21201-B7 TDA21201-P7 TDA21201-S7 |
30 A PWM BASED PRPHL DRVR, S
30 A PWM BASED PRPHL DRVR, Z
Integrated Switch(MOSFET Driver and MOSFETs)
|
Infineon Technologies AG
|
| PIP3208-A PIP3208-A127 |
2 A BUF OR INV BASED PRPHL DRVR, PSFM5 PLASTIC, TO-220, SOT-263B-01, SEP-5
PowerMOS transistor TOPFET high side switch 2 A BUF OR INV BASED PRPHL DRVR, PSFM5
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
