| PART |
Description |
Maker |
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| 5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IXRH50N120 IXRH50N100 |
1200V IGBT with reverse blocking capability
1000V IGBT with reverse blocking capability
|
IXYS[IXYS Corporation]
|
| FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
