PART |
Description |
Maker |
PXAC201202FC-V2 |
High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz
|
Wolfspeed
|
PXAC182908FV PXAC182908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
MXR9745T1 MXR9745RT1 |
31.5 dBm / 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 31.5 dBm 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
PXFC191507FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
PXAC241702FCV1R250 PXAC241702FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ?2400 MHz
|
Infineon Technologies A...
|
PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
PTFA212002E |
Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
|
Infineon Technologies AG
|
PTFA091503EL |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz
|
Infineon Technologies AG
|
PXAC260602FCV1R0XTMA1 PXAC260602FC-16 PXAC260602FC |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 ?2690 MHz
|
Infineon Technologies A...
|
STK4241II STK4241 |
2ch AF Power Amplifier (Split Power Supply) (120W 120W min, THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|