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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. PACKAGE DRAWING (Unit : mm) 0.3 0.05 0.1 +0.1 -0.05 1.6 0.1 0.8 0.1 D 0 to 0.1 G 0.2 +0.1 -0 0.5 0.5 0.6 0.75 0.05 S FEATURES * Can be driven by a 2.5 V power source. * Low gate cut-off voltage. 1.0 1.6 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -30 V V A A mW C C EQUIVALENT CIRCUIT Drain # 20 # 0.1 # 0.4 200 150 -55 to +150 Total Power Dissipation Channel Temperature Storage Temperature Gate Gate Protect Diode Source Internal Diode Notes 1. PW 10 s, Duty Cycle 1 % 2 2. Mounted on ceramic substrate of 3.0cm Remark x 0.64 mm Marking : C1 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13801EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan (c) 1999 2SJ559 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = # 20 V, VDS = 0 V VDS = -3 V, ID = -10 A VDS = -3 V, ID = -10 mA VGS = -2.5 V, ID = -1 mA VGS = -4 V, ID = -10 mA VGS = -10 V, ID = -10 mA VDS = -3 V VGS = 0 V f = 1 MHz VDD = -3 V ID = -10 mA VGS(on) = -4 V RG = 10 , RL = 300 -1.0 20 23 11 6 5 15 1.3 140 330 220 320 60 23 13 -1.4 MIN. TYP. MAX. -1 UNIT A A V mS pF pF pF ns ns ns ns # 10 -1.7 TEST CIRCUIT SWITCHING TIME D.U.T. RL PG. RG RG = 10 VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS VGS Wave Form 0 10 % VGS(on) 90 % VGS 0 = 1 s Duty Cycle 1 % ID Wave Form 2 Data Sheet D13801EJ1V0DS00 2SJ559 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE dT - Derating Factor - % ID - Drain Current - mA 80 -80 VGS = -10 V VGS = -6 V VGS = -4 V VGS = -3 V 60 -60 40 -40 20 -20 VGS = -2.5 V 0 0 30 60 90 120 TA - Ambient Temperature - C 150 0 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V -5 TRANSFER CHARACTERISTICS -100 IyfsI - Forward Transfer Admittance - mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 VDS = -3 V VDS = -3 V -10 ID - Drain Current - mA TA = 125 C -1 TA = 75 C TA = 25 C -0.1 TA = -25 C 100 TA = -25 C TA = 25 C 10 TA = 75 C TA = 125 C 1 -0.1 -0.01 -0.001 0 -0.8 -1.6 -2.4 -3.2 -4.0 -1 -10 -100 -1000 VGS - Gate to Source Voltage - V ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -2.5 V 50 40 30 20 TA = 25 C 10 0 -0.1 TA = -25 C TA = 125 C TA = 75 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = -4 V 50 40 30 20 10 0 -0.1 TA = 25 C TA = -25 C -1 -10 -100 ID - Drain Current - mA -1000 TA = 125 C TA = 75 C -1 -10 -100 ID - Drain Current - mA -1000 Data Sheet D13801EJ1V0DS00 3 2SJ559 RDS(on) - Drain to Source On-Stage Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 50 40 30 20 10 0 -0.1 TA = 25 C TA = -25 C TA = 75 C TA = 125 C VGS = -10 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 50 ID = -1 mA 40 30 20 10 0 0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V -10 ID = -10 mA ID = -100 mA -1 -10 -100 ID - Drain Current - mA -1000 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 Ciss,Coss,Crss - Capacitance - pF td(on),tr,td(off),tf - Switching Time - ns SWITCHING CHARACTERISTICS 1000 tr tf td(on) 100 td(off) VGS = 0 V f = 1 MHz Coss 10 Ciss Crss 1 -1 -10 VDS - Drain to Source Voltage - V -100 10 -10 VDD = -3 V VGS(on) = -4 V Rin = 10 -100 ID - Drain Current - mA -1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -1000 ID - Reverse Drain Current - mA -100 -10 -1 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VSD - Source to Drain Voltage - V 4 Data Sheet D13801EJ1V0DS00 2SJ559 [MEMO] Data Sheet D13801EJ1V0DS00 5 2SJ559 [MEMO] 6 Data Sheet D13801EJ1V0DS00 2SJ559 [MEMO] Data Sheet D13801EJ1V0DS00 7 2SJ559 * The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8 |
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