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| Surface Mount Gallium Arsenide FET for Oscillators Technical Data ATF-13786 Features * Low Cost Surface Mount Plastic Package * High fMAX: 60 GHz Typical * Low Phase Noise at 10 GHz: -110 dBc/Hz @ 100 kHz Typical * Output Power at 10 GHz: up to 10 dBm * Tape-and-Reel Packaging Option Available 25 Description Hewlett-Packard's ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7 GHz ISM bands. 85 mil Plastic Surface Mount Package Pin Configuration 4 SOURCE 20 MSG 137 GATE DRAIN 1 3 GAIN (dB) 15 MAG 10 S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 40 mA. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5-43 5965-8721E ATF-13786 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation[2,3] Channel Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 4 -4 -6 IDSS 225 150 -65 to +150 Notes: 1. Operation of this device above any one of these conditions may cause permanent damage. 2. TCASE = 25oC (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit board). 3. Derate at 3.1 mW/oC for TC >60 oC. Thermal Resistance[2]: jc = 325C/W ATF-13786 Electrical Specifications, TC = 25C, VDS = 3 V, IDS = 40 mA[4] (unless noted) Symbol |S21|2 P1 dB G1 dB PN gm IDSS VP VBDG Parameters and Test Conditions Insertion Power Gain Power at 1 dB Gain Compression 1 dB Compressed Gain Phase Noise (100 kHz offset)[5] Transconductance Saturated Drain Current Pinchoff Voltage Gate - Drain Breakdown Voltage f = 10 GHz f = 10 GHz f = 10 GHz f = 10 GHz VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 1 mA IDG = 0.1 mA Units dB dBm dB dBc/Hz mS mA V V 25 50 -2.0 6.5 15 6.5 Min. Typ. 6.0 16.5 7.5 -110 55 70 -1.5 7 100 -0.5 Max. Notes: 4. Recommended maximum bias conditions for use as an oscillator. 5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance. Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator. 5-44 Typical Scattering Parameters, Common Source, Z O = 50 , VDS = 3 V, IDS = 40 mA Frequency GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.97 0.88 0.78 0.67 0.57 0.52 0.53 0.57 0.60 0.63 0.64 0.67 0.72 0.76 0.78 0.77 0.74 0.73 Ang. -23 -46 -68 -95 -125 -157 176 160 143 130 117 107 99 97 90 83 77 69 Mag. 4.80 4.60 4.35 4.02 3.61 3.20 2.84 2.54 2.27 2.04 1.82 1.65 1.55 1.47 1.40 1.32 1.26 1.23 S21 Ang. 157 135 117 95 75 57 41 31 16 4 -9 -19 -29 -35 -46 -58 -68 -80 Mag. 0.03 0.06 0.08 0.11 0.12 0.13 0.14 0.14 0.14 0.15 0.14 0.14 0.14 0.14 0.14 0.14 0.14 0.14 S12 Ang. 77 66 58 47 37 28 21 18 12 6 0 -4 -8 -9 -14 -20 -28 -36 Mag. 0.46 0.42 0.36 0.28 0.19 0.12 0.08 0.10 0.15 0.19 0.25 0.30 0.35 0.39 0.41 0.42 0.43 0.42 S22 Ang. -13 -25 -35 -48 -65 -93 -147 171 148 134 122 113 109 111 108 104 98 93 85 mil Plastic Surface Mount Package Dimensions 0.51 0.13 (0.020 0.005) 4 Part Number Ordering Information Part Number ATF-13786-TR1 ATF-13786-STR Devices per Reel 1000 10 Reel Size 7'' strip 137 45 1 Please refer to the "Tape-and-Reel Packaging for Surface Mount Semiconductors" data sheet for more detailed information. C L 3 2.34 0.38 (0.092 0.015) 2 2.67 0.38 (0.105 0.15) 0.203 0.051 (0.006 0.002) 1.52 0.25 (0.060 0.010) 5 TYP. 0.66 0.013 (0.026 0.005) 0.30 MIN (0.012 MIN) 8 MAX 0 MIN 2.16 0.13 (0.085 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 5-45 |
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