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| Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 0.1 I Features * S-mini type 3-pin package * Allowing to rectify under (IF(AV) = 700 mA) condition * Low forward rise voltage VF (VF < 0.45 V) * Allowing high-density mounting 0.65 2.0 0.2 1.3 0.1 0.425 1.25 0.1 0.425 1 0.65 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*2 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 25 700 2 125 -55 to +125 Unit V V mA A C C 0.9 0.1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M5E Internal Connection 1 3 2 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Mounted on a alumina printed circuit board I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time Symbol IR VF Ct trr VR = 20 V IF = 700 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 100 7 Conditions Min Typ Max 200 0.45 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 0.15 - 0.05 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.3 - 0 + 0.1 1 MA3ZD12 IF V F 0.5 Schottky Barrier Diodes (SBD) VF Ta IR VR 10-1 1 Forward voltage VF (V) Forward current IF (A) 10-2 75C 10-3 10-4 10-5 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 25C - 20C 0.3 IF = 700 mA Reverse current IR (A) 10-1 Ta = 125C 0.4 10-2 Ta = 125C 10-3 75C 0.2 100 mA 0.1 10-4 25C 10-5 3 mA 0 -40 0 40 80 120 10-6 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 105 VR = 20 V 120 Ct VR Ta = 25C 10 V 103 1V 102 Terminal capacitance Ct (pF) 104 100 Reverse current IR (mA) 80 60 40 10 20 1 0 20 40 60 80 100 120 140 0 0 5 10 15 20 25 30 Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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