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| Switching Diodes MA3J147 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 0.425 2.1 0.1 1.25 0.1 0.425 + 0.1 2.0 0.2 1.3 0.1 0.65 0.65 I Features * Small S-mini type package contained two elements, allowing highdensity mounting * Two diodes are connected in series in the package 1 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Series Single Series Single Series Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 65 225 145 500 325 150 -55 to +150 Unit V V mA 0.9 0.1 I Absolute Maximum Ratings Ta = 25C mA 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 Flat S-Mini Type Package (3-pin) Marking Symbol: MS mA Internal Connection C C 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 2 3 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.15 - 0.05 + 0.1 0.3 - 0 1 MA3J147 IF V F 103 105 Ta = 150C 102 Switching Diodes IR V R 1.6 1.4 VF Ta Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) Ta = 150C 100C 25C - 20C 104 1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA 100C 103 10 IF = 100 mA 1 102 25C 10 10-1 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 105 35 V 6V Ct VR 1.2 f = 1 MHz Ta = 25C IF(surge) tW 1 000 300 tW Ta = 25C IF(surge) Terminal capacitance Ct (pF) 104 VR = 75 V 1.0 Forward surge current IF(surge) (A) Reverse current IR (nA) 100 30 10 3 1 0.3 0.1 Non repetitive 0.8 103 0.6 102 0.4 10 0.2 1 -40 0 40 80 120 160 200 0 0 20 40 60 80 100 120 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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