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2N4953 Discrete POWER & Signal Technologies 2N4953 E CB TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 30 60 5.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4953 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N4953 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C =10 mA, IB = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCB = 40 V, IE = 0 VEB = 3.0 V, IC = 0 30 60 5.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA VCE = 10 V, IC = 150 mA 75 150 200 600 0.3 1.3 1.2 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage V V V SMALL SIGNAL CHARACTERISTICS Cob hfe ton toff Output Capacitance Small-Signal Current Gain Turn-On Time Turn-Off Time VCB = 10 V, f = 1.0 MHz I C = 20 mA, VCE = 10 V, f = 100 MHz VCC = 30 V, IC = 150 mA, I B1 = I B2 = 15 mA 2.5 40 400 ns ns 8.0 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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