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| SI5315-DS/SI5315-DS(B) Semiconductor High Speed IRED Features * Colorless transparency lens type * 5mm(T-13/4) all plastic mold type * Low power consumption * High power, High speed type Applications * Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Outline Dimensions STRAIGHT TYPE 5.00.2 unit : mm STOPPER TYPE 5.00.2 0.80.2 8.60.2 0.80.2 8.60.2 3.40.2 0.5 23.0 MIN 1.0 MIN 3.40.2 0.5 23.0 MIN 1.0 MIN 2.54NOM 2.54NOM 1 2 5.8 1 2 5.8 PIN Connections 1. Cathode 2. Anode KLI-0005-000 1 SI5315-DS/SI5315-DS(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Ratings 150 100 1 4 -2585 -30100 Unit mW mA A V 260 for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package Electrical Characteristics Characteristic Forward Voltage Radiant Intensity Peak Wavelength Spectrum Bandwidth Rise Time Reverse Current Symbol VF IE Test Condition IF= 50mA IF= 50mA IF= 50mA IF= 50mA IF= 50mA VR=4V IF= 50mA Min. 30 - Typ. 1.5 70 875 45 15 20 Max. 2.0 10 - Unit V mW/Sr nm nm ns uA deg P tr IR /2 1 * Half angle 3 *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity KLI-0005-000 2 SI5315-DS / SI5315-DS(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IE - IF Forward Current IF [mA] Forward Voltage VF [V] Radiant Intensity IE [mW/Sr] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5 Radiation Diagram Relative Radiant Intensity IE [%] KLI-0005-000 3 |
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