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| PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES * PACKAGE DIMENSIONS (in millimeters) 4.50.1 1.60.2 1.50.1 * High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature 2 Symbol VCBO VCEO VEBO IC Note1 PT Rating 20 12 3.0 100 1.2 150 -65 to +150 Unit 0.8MIN. C E B E V V V mA W C C 0.42 0.06 1.5 3.0 0.46 0.06 0.42 0.06 3.950.25 2.450.1 0.250.02 Tj Tstg Note 1. 0.7 mm x 16 cm double sided ceramic substrate (Copper plating) ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-back Capacitance Insertion Power Gain Noise Figure Noise Figure Symbol ICB0 IEB0 hFE fT Cre | S21e | NF NF 2 PIN CONNECTIONS E: Emitter C: Collector B: Base Test Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz Note3 Note2 MIN. TYP. MAX. 1.0 1.0 Unit A A 50 120 6.5 0.5 12.0 1.1 1.8 250 GHz 0.8 pF dB dB 3.0 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz Notes 2. Pulse measurement : PW 350 S, Duty Cycle 2 % 3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Rank Marking hFE RH RH 50 to 100 RF RF 80 to 160 RE RE 125 to 250 Document No. P10938EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan (c) 1996 2SC5336 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 5.0 f = 1.0 MHZ Cre - Feed-back Capacitance - pF PT - Total Power Dissipation - W FEED BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2.0 Ceramic Substrate 16 cm2 x 0.7 mm 1.0 Free Air Rth(j-a) 312.5 C/W 3.0 2.0 1.0 0.5 0.3 1 3 5 10 20 30 0 50 100 150 TA - Ambient Temperature - C VCB - Collector to Base Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT 200 15 VCE = 10 V S21e 2 - Insertion Power Gain - dB INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1 GHZ hFE - DC Current Gain 100 10 50 5 20 10 0.5 1 5 10 50 0 1 3 5 10 20 30 50 100 IC - Collector Current - mA IC - Collector Current - mA 10 fT - Gain Bandwidth Product - GHZ S21e 2 - Insertion Power Gain - dB MAG - Maximum Available Power Gain - dB GAIN BAND WIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION GAIN .MAXIMUM GAIN vs. FREQUENCY S21e 2 MAG 5 3 2 1 20 10 0.5 0.3 VCE = 10 V f = 1 GHZ 1 3 5 10 20 30 50 VCE = 10 V IC = 20 mA 0 0.2 0.4 0.6 0.8 1.0 1.4 2.0 IC - Collector Current - mA f - Frequency - GHZ 2 2SC5336 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1 GHZ INTERMODULATION DISTORTION vs. COLLECTOR CURRENT IM2 - Intermoduration Distortion - dB -80 -70 -60 IM3 NF - Noise Figure - dB 5 4 3 2 1 0 0.5 1 5 10 50 IM2 VCE = 10 V at VO = 100 dB V/50 Rg = Re = 50 IM2 f = 90 + 100 MHZ IM3 f = 2 x 200 - 190 MHZ 20 30 40 50 60 70 IC - Collector Current - mA -50 -40 -30 IC - Collector Current - mA 3 2SC5336 S-PARAMETER VCE = 10 V, IC = 20 mA S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG .519 .413 .413 .345 .331 .320 .302 .296 .283 .285 .265 .260 .263 .242 .252 .253 .253 .257 .262 .273 ANG - 74.5 - 112.9 - 133.4 - 145.7 - 153.8 - 159.6 - 166.8 - 169.2 - 173.2 - 179.8 175.2 174.1 166.0 163.0 160.1 154.0 149.9 147.2 143.0 141.5 MAG 30.931 18.965 13.324 10.164 8.177 6.834 5.832 5.107 4.600 4.200 3.930 3.979 3.741 3.115 2.844 2.595 2.420 2.305 2.171 2.049 S21 ANG 131.9 111.5 101.9 95.9 91.8 89.1 86.7 84.3 83.1 82.3 80.8 78.5 68.6 66.6 65.7 64.1 63.7 63.0 62.6 61.2 MAG .017 .031 .038 .045 .055 .064 .074 .077 .088 .097 .100 .109 .114 .119 .133 .140 .158 .165 .172 .177 S12 ANG 60.6 61.9 65.1 69.8 71.8 70.9 73.9 74.4 71.2 74.5 76.3 75.9 76.8 78.3 82.0 81.0 80.9 82.2 80.5 78.3 MAG .752 .570 .465 .428 .436 .438 .434 .429 .436 .455 .467 .529 .551 .509 .510 .496 .515 .518 .536 .524 S22 ANG - 30.2 - 39.7 - 39.8 - 40.1 - 41.1 - 43.5 - 47.5 - 47.8 - 46.5 - 47.8 - 46.8 - 47.4 - 55.8 - 55.8 - 58.5 - 55.2 - 54.8 - 56.5 - 58.6 - 61.5 4 2SC5336 S-PARAMETER VCE = 10 V, IC = 40 mA S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG .378 .317 .308 .299 .297 .288 .274 .261 .255 .260 .243 .239 .245 .216 .235 .243 .233 .242 .249 .260 ANG - 97.1 - 131.8 - 150.1 - 158.7 - 165.5 - 169.2 - 173.7 - 177.3 178.9 173.0 169.4 169.3 160.3 157.8 155.3 148.8 146.0 144.6 141.9 140.4 MAG 32.908 18.819 12.955 9.775 7.899 6.586 5.607 4.879 4.435 4.024 3.801 3.827 3.587 2.980 2.726 2.537 2.348 2.200 2.073 1.986 S21 ANG 123.3 106.0 97.5 93.1 89.8 87.6 85.2 83.5 82.2 81.4 80.6 78.2 68.4 66.0 66.1 64.0 64.2 63.5 63.3 61.7 MAG .017 .027 .035 .042 .052 .061 .071 .081 .092 .095 .098 .109 .117 .125 .137 .143 .159 .163 .171 .184 S12 ANG 71.1 71.2 71.8 78.1 78.5 79.1 77.4 76.4 76.5 77.6 77.1 78.3 78.0 80.3 86.5 80.6 81.2 80.4 81.7 77.5 MAG .665 .487 .398 .393 .399 .407 .400 .415 .399 .440 .441 .494 .517 .486 .500 .474 .496 .491 .534 .535 S22 ANG - 34.7 - 38.7 - 38.5 - 36.9 - 37.6 - 39.9 - 44.6 - 47.4 - 46.2 - 44.3 - 45.2 - 46.2 - 55.4 - 54.5 - 59.0 - 53.7 - 56.8 - 53.6 - 58.0 - 61.3 5 2SC5336 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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