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| SI4464DY New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 2.2 2.1 rDS(on) (W) 0.240 @ VGS = 10 V 0.260 @ VGS = 6.0 V D TrenchFETr Power MOSFET D PWM Optimized for (Lowest Qg and Low RG) APPLICATIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Single Avalanch Current Single Avalanch Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 200 "20 2.2 Steady State Unit V 1.7 1.3 8 3 0.45 mJ 1.2 1.5 0.9 -55 to 150 W _C A A ID IDM IAS EAS IS PD TJ, Tstg 1.7 2.1 2.5 1.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72051 S-22099--Rev. A, 02-Dec-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 37 68 17 Maximum 50 85 21 Unit _C/W C/W 1 SI4464DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.2 A rDS(on) VGS = 6.0 V, ID = 2.1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 2.2 A IS = 2.1 A, VGS = 0 V 8 0.195 0.210 8.0 0.8 1.2 0.240 0.260 W S V 2.0 4 "100 1 5 V nA mA m A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W ID ^ 1.0 A, VGEN = 10 V, RG = 6 W VDS = 100 V, VGS = 10 V, ID = 2.2 A 12 2.5 3.8 2.5 10 12 15 15 60 15 20 25 25 90 ns W 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 10 thru 5 V 6 I D - Drain Current (A) I D - Drain Current (A) 6 8 Transfer Characteristics 4 4 TC = 125_C 2 25_C -55 _C 0 2 4V 3V 0 0 2 4 6 8 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72051 S-22099--Rev. A, 02-Dec-02 2 SI4464DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.4 r DS(on) - On-Resistance ( W ) 800 Vishay Siliconix Capacitance 0.3 VGS = 6 V 0.2 C - Capacitance (pF) Ciss 600 400 VGS = 10 V 0.1 200 Crss Coss 0.0 0 2 4 ID - Drain Current (A) 6 8 0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 2.2 A 8 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.2 A 2.0 6 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 1.5 4 1.0 2 0.5 0 0 3 Qg - Total Gate Charge (nC) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.5 I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.4 ID = 2.2 A 0.3 TJ = 150_C 1 0.2 TJ = 25_C 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Document Number: 72051 S-22099--Rev. A, 02-Dec-02 www.vishay.com 3 SI4464DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 50 Single Pulse Power 0.4 V GS(th) Variance (V) 40 ID = 250 mA Power (W) 30 0.0 -0.4 20 -0.8 10 -1.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 600 TJ - Temperature (_C) rDS(on) Limited 10 ID(on) Limited 1 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 0.1 TA = 25_C Single Pulse P(t) = 0.1 P(t) = 1 0.01 P(t) = 10 dc BVDSS Limited 0.001 0.1 1 10 100 1000 Time (sec) Safe Operating Area IDM Limited P(t) = 0.0001 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72051 S-22099--Rev. A, 02-Dec-02 SI4464DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Vishay Siliconix Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 0.1 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72051 S-22099--Rev. A, 02-Dec-02 www.vishay.com 5 |
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