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| a FEATURES 1.8 V to 5.5 V Single Supply 5 (Max) On Resistance 0.75 (Typ) On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SC70 Package Fast Switching Times t ON 20 ns t OFF 6 ns Typical Power Consumption (<0.01 W) TTL/CMOS-Compatible APPLICATIONS Battery-Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement 2.5 CMOS Low Voltage SPDT Switch In SC70 Package ADG749 FUNCTIONAL BLOCK DIAGRAM ADG749 S2 D S1 IN SWITCHES SHOWN FOR A LOGIC "1" INPUT PRODUCT HIGHLIGHTS GENERAL DESCRIPTION 1. 1.8 V to 5.5 V Single Supply Operation. The ADG749 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails. 2. Very Low RON (5 max at 5 V, 10 max at 3 V). At 1.8 V operation, RON is typically 40 over the temperature range. 3. On-Resistance Flatness (RFLAT(ON)) (0.75 typ). 4. -3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON /tOFF. 7. Tiny 6-lead SC70 package. The ADG749 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The ADG749 can operate from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. Each switch of the ADG749 conducts equally well in both directions when on. The ADG749 exhibits break-before-make switching action. Because of the advanced submicron process, -3 dB bandwidths of greater than 200 MHz can be achieved. The ADG749 is available in a 6-lead SC70 package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2000 ADG749-SPECIFICATIONS1 (V = 5 V noted.) DD 10%, GND = 0 V. All specifications -40 C to +85 C, unless otherwise Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS2 Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation B Version -40 C to 25 C +85 C 0 V to VDD 2 .5 5 6 0.1 0.8 0.75 1.2 0.01 0.25 0.01 0.25 Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ Test Conditions/Comments VS = 0 V to VDD, IS = -10 mA Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VS = 0 V to VDD, IS = -10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V Test Circuit 2 VS = VD = 1 V, or VS = VD = 4.5 V Test Circuit 3 0.35 0.35 2.4 0.8 0.005 0.1 14 20 3 6 8 1 -67 -87 -62 -82 200 7 27 VIN = VINL or VINH Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 , CL = 35 pF, VS1 = VS2 = 3 V, Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 , CL = 5 pF, Test Circuit 8 VDD = 5.5 V Digital Inputs = 0 V or 5 V 0.001 1.0 A typ A max NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. -2- REV. 0 SPECIFICATIONS (V Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) 1 ADG749 DD =3V 10%, GND = 0 V. All specifications -40 C to +85 C, unless otherwise noted.) B Version -40 C to 25 C +85 C 0 V to VDD 7 10 0.1 0.8 2.5 0.01 0.25 0.01 0.25 Unit V typ max typ max typ nA typ nA max nA typ nA max V min V max A typ A max ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ Test Conditions/Comments 6 VS = 0 V to VDD, IS = -10 mA, Test Circuit 1 VS = 0 V to VDD, IS = -10 mA VS = 0 V to VDD, IS = -10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V, Test Circuit 2 VS = VD = 1 V, or VS = VD = 3 V, Test Circuit 3 On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON tOFF Break-Before-Make Time Delay, tD Off Isolation 2 0.35 0.35 2.0 0.4 0.005 0.1 16 24 4 7 8 1 -67 -87 -62 -82 200 7 27 VIN = VINL or VINH Channel-to-Channel Crosstalk Bandwidth -3 dB CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 4 RL = 300 , CL = 35 pF VS1 = VS2 = 2 V, Test Circuit 5 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 6 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz, Test Circuit 7 RL = 50 , CL = 5 pF, Test Circuit 8 VDD = 3.3 V Digital Inputs = 0 V or 3 V 0.001 1.0 A typ A max NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 -3- ADG749 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25C unless otherwise noted) TERMINOLOGY VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V Analog, Digital Inputs2 . . . . . . . . . . -0.3 V to VDD + 0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150C SC70 Package, Power Dissipation . . . . . . . . . . . . . . . . 315 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 332C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 120C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. Table I. Truth Table ADG749 IN 0 1 Switch S1 ON OFF Switch S2 OFF ON PIN CONFIGURATION 6-Lead SC70 IN 1 VDD 2 GND 3 6 S2 D S1 ADG749 TOP VIEW (Not to Scale) 5 4 Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RON max - RON min. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the switch "OFF." IS (OFF) ID, IS (ON) Channel Leakage Current with the switch "ON." VD (VS) Analog Voltage on Terminals D, S. CS (OFF) "OFF" Switch Source Capacitance. CD (OFF) "OFF" Switch Drain Capacitance. CD, CS (ON) "ON" Switch Capacitance. tON Delay between applying the digital control input and the output switching on. tOFF Delay between applying the digital control input and the output switching off. tD "OFF" time or "ON" time measured between the 90% points of both switches, when switching from one address state to another. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an "OFF" switch. Bandwidth The frequency at which the output is attenuated by -3 dBs. On Response The frequency response of the "ON" switch. On Loss The voltage drop across the "ON" switch seen on the On Response vs. Frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. VDD GND S D IN RON RON ORDERING GUIDE Model ADG749BKS Temperature Range -40C to +85C Package Description SC70 (Plastic Surface Mount) Package Option KS-6 Branding Information* SHB *Brand = Brand on these packages is limited to three characters due to space constraints. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG749 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE -4- REV. 0 Typical Performance Characteristics- ADG749 6.0 5.5 5.0 4.5 4.0 3.5 RON - 3.0 2.5 2.0 1.5 1.0 VDD = 5.0V VDD = 3.0V VDD = 2.7V TA = 25 C 10m VDD = 5V 1m 100 I SUPPLY - A 4.5 5.0 VDD = 4.5V 10 1 100n 10n 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 1n 1 10 100 1k 10k 100k FREQUENCY - Hz 1M 10M 100M TPC 1. On Resistance as a Function of VD (VS) Single Supplies TPC 4. Supply Current vs. Input Switching Frequency 6.0 5.5 5.0 4.5 4.0 -40 C 3.5 +85 C VDD = 3V -30 VDD = 5V, 3V -40 -50 OFF ISOLATION - dB +25 C -60 -70 -80 -90 -100 -110 -120 RON - 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 3.0 -130 10k 100k 1M 10M FREQUENCY - Hz 100M 0 TPC 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V TPC 5. Off Isolation vs. Frequency 6.0 5.5 5.0 4.5 CROSSTALK - dB -30 VDD = 5V VDD = 5V, 3V -40 -50 -60 -70 -80 -90 -100 -110 -120 4.0 3.5 RON - +85 C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 +25 C -40 C -130 10k 100k VD OR VS - DRAIN OR SOURCE VOLTAGE - V 1M FREQUENCY - Hz 10M 100M 0 TPC 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V TPC 6. Crosstalk vs. Frequency REV. 0 -5- ADG749 0 VDD = 5V ON RESPONSE - dB -2 -4 -6 10k 100k 1M 10M FREQUENCY - Hz 100M TPC 7. On Response vs. Frequency Test Circuits IDS V1 S VS D IS (OFF) A S D VS ID (OFF) A VD VS S D ID (ON) A VD RON = V1/I DS Test Circuit 1. On Resistance VDD Test Circuit 2. Off Leakage Test Circuit 3. On Leakage 0.1 F VIN VDD S VS IN GND D RL 300 CL 35pF VOUT VOUT 50% 90% 50% 90% tON tOFF Test Circuit 4. Switching Times 0.1 F VDD VIN D S2 IN VIN GND D2 RL2 300 CL2 35pF VOUT VS1 VS2 S1 VDD 0V 50% 0V 50% 50% 50% VOUT tD tD Test Circuit 5. Break-Before-Make Time Delay, tD VDD VDD 0.1 F VDD D S2 RL 50 VOUT VS IN 0.1 F 0.1 F VDD S1 VOUT S1 S2 VDD D RL 50 S1 S2 VDD D RL 50 VOUT VS VIN IN GND GND VS VIN IN GND CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG |VS/VOUT| Test Circuit 6. Off Isolation Test Circuit 7. Channel-to-Channel Crosstalk -6- Test Circuit 8. Bandwidth REV. 0 ADG749 APPLICATIONS INFORMATION The ADG749 belongs to Analog Devices' new family of CMOS switches. This series of general purpose switches have improved switching times, lower on resistance, higher bandwidths, low power consumption and low leakage currents. ADG749 Supply Voltages Functionality of the ADG749 extends from 1.8 V to 5.5 V single supply, which makes it ideal for battery powered instruments, where important design parameters are power efficiency and performance. It is important to note that the supply voltage effects the input signal range, the on resistance and the switching times of the part. By taking a look at the typical performance characteristics and the specifications, the effects of the power supplies can be clearly seen. For VDD = 1.8 V operation, RON is typically 40 over the temperature range. On Response vs. Frequency The signal transfer characteristic is dependent on the switch channel capacitance, CDS. This capacitance creates a frequency zero in the numerator of the transfer function A(s). Because the switch on resistance is small, this zero usually occurs at high frequencies. The bandwidth is a function of the switch output capacitance combined with CDS and the load capacitance. The frequency pole corresponding to these capacitances appears in the denominator of A(s). The dominant effect of the output capacitance, CD, causes the pole breakpoint frequency to occur first. Therefore, in order to maximize bandwidth a switch must have a low input and output capacitance and low on resistance. The On Response vs. Frequency plot for the ADG749 can be seen in TPC 7. Off Isolation Off isolation is a measure of the input signal coupled through an off switch to the switch output. The capacitance, CDS, couples the input signal to the output load, when the switch is off as shown in Figure 2. CDS S VIN CD D VOUT CLOAD RLOAD Figure 1 illustrates the parasitic components that affect the ac performance of CMOS switches (the switch is shown surrounded by a box). Additional external capacitances will further degrade some performance. These capacitances affect feedthrough, crosstalk and system bandwidth. CDS S RON VIN CD D VOUT CLOAD RLOAD Figure 2. Off Isolation Is Affected by External Load Resistance and Capacitance Figure 1. Switch Represented by Equivalent Parasitic Components The transfer function that describes the equivalent diagram of the switch (Figure 1) is of the form (A)s shown below. s(RON CDS ) + 1 A(s) = RT s(RT RON CT ) + 1 where: RT = RLOAD/(RLOAD + RON) CT = CLOAD + CD + CDS The larger the value of CDS, larger values of feedthrough will be produced. The typical performance characteristic graph of TPC 5 illustrates the drop in off isolation as a function of frequency. From dc to roughly 200 kHz, the switch shows better than -95 dB isolation. Up to frequencies of 10 MHz, the off isolation remains better than -67 dB. As the frequency increases, more and more of the input signal is coupled through to the output. Off isolation can be maximized by choosing a switch with the smallest CDS as possible. The values of load resistance and capacitance affect off isolation also, as they contribute to the coefficients of the poles and zeros in the transfer function of the switch when open. s(RLOAD CDS ) A(s) = s(RLOAD ) (CLOAD + CD + CDS ) + 1 REV. 0 -7- ADG749 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 6-Lead Plastic Surface Mount Package (SC70) (KS-6) 0.087 (2.20) 0.071 (1.80) 0.053 (1.35) 0.045 (1.15) PIN 1 6 1 5 2 4 3 0.094 (2.40) 0.071 (1.80) 0.026 (0.65) BSC 0.051 (1.30) BSC 0.039 (1.00) 0.031 (0.80) 0.004 (0.10) 0.000 (0.00) 0.043 (1.10) 0.031 (0.80) 0.012 (0.30) SEATING 0.006 (0.15) PLANE 8 0.007 (0.18) 0 0.004 (0.10) 0.012 (0.30) 0.004 (0.10) -8- REV. 0 PRINTED IN U.S.A. C02075-2.5-10/00 (rev. 0) |
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