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| (R) STTH803D/G HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY FOR LOW SIDE EFFECTS DESCRIPTION Single Fast Recovery Epitaxial Diode suited for Switch Mode Power Supply and high frequency DC/DC converters. Packaged in TO-220AC or D2PAK this device is especially intended for secondary rectification. 8A 300 V 175 C 1V 35 ns TO-220AC STTH803D A K K K A N.C. D2PAK STTH803G ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive avalanche current Storage temperature range Maximum operating junction temperature Tc = 150C = 0.5 tp = 10 ms sinusoidal tp = 20 s square Value 300 20 8 100 4 -65 +175 + 175 Unit V A A A A C C June 1999 - Ed: 5C 1/6 STTH803D/G THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 2.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25C Tj = 125C IF = 8 A IF = 8 A Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.031 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM Tests conditions Irr = 0.25 A dIF/dt = - 50 A/s IR = 1 A VR = 30 V Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 125C 0.3 8 Min. Typ. Max. 25 35 200 3.5 ns V A Unit ns Tj = 25C Tj = 125C 0.85 20 Min. Typ. Max. 20 200 1.25 1 V Unit A VF ** IF = 8 A dIF/dt = 100 A/s VFR = 1.1 x VF max. Vcc = 200V dIF/dt = 200 A/s IF = 8 A 2/6 STTH803D/G Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) = 0.05 = 0.1 = 0.2 P1(W) 12 10 8 6 100.0 = 0.5 Tj=125C =1 10.0 Tj=25C Tj=75C 4 2 IF(av) (A) 0 0 1 2 3 4 5 6 7 =tp/T T 1.0 tp 8 9 10 VFM(V) 0.1 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 16 14 12 10 8 IF=0.5*IF(av) VR=200V Tj=125C IF=IF(av) IF=2*IF(av) = 0.2 = 0.1 Single pulse 6 T 4 tp tp(s) 1E-2 1E-1 =tp/T 2 0 0 50 dIF/dt(A/s) 100 150 200 250 300 350 400 450 500 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 100 90 80 70 60 50 40 30 20 10 0 Fig. 6: values). Softness factor versus dIF/dt (typical S factor 0.60 VR=200V Tj=125C 0.50 0.40 VR=200V Tj=125C IF=2*IF(av) IF=IF(av) 0.30 0.20 IF=0.5*IF(av) dIF/dt(A/s) 0.10 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0.00 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH803D/G Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 8 7 6 5 4 3 IF=IF(av) Tj=125C S factor IRM 2 1 Tj(C) 50 75 100 125 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 300 250 200 150 100 50 0 0 dIF/dt(A/s) VFR=1.1*VF max. IF=IF(av) Tj=125C 50 100 150 200 250 300 350 400 450 500 4/6 STTH803D/G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. Millimeters Min. Max. 4.60 2.69 0.23 0.93 1.70 0.60 1.36 9.35 Inches Min. 0.173 0.098 0.001 0.027 0.045 0.017 0.048 0.352 Max. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 D L L3 A1 B2 B G A2 C R A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 4.40 2.49 0.03 0.70 1.14 0.45 1.23 8.95 M * V2 * FLAT ZONE NO LESS THAN 2mm 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 FOOT PRINT DIMENSIONS (in millimeters) D2PAK 16.90 10.30 1.30 5.08 3.70 8.90 5/6 STTH803D/G PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS H2 C L5 OI L6 L2 D L7 A REF. A C D E F F1 G H2 L2 L4 L5 L6 L7 L9 M Diam. I Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 4.95 5.15 10.00 10.40 16.40 typ. 13.00 14.00 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.194 0.202 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 L9 F1 L4 F G M E Ordering code STTH803D STTH803G Marking STTH803D STTH803G Package TO-220AC D PAK 2 Weight 1.86g 1.48g Base qty 50 50 Delivery mode Tube Tube Cooling method: by conduction (C) Recommended torque value (TO-220AC): 0.55 N.m. Maximum torque value (TO-220AC): 0.70 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 6/6 |
Price & Availability of STTH803D
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