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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 - 55 to +150 mAdc mAdc mW mW/C Watts mW/C C 1 2 3 2N6515 250 250 2N6519 300 300 2N6517 2N6520 350 350 Unit Vdc Vdc Vdc PD CASE 29-04, STYLE 1 TO-92 (TO-226AA) TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 -- -- 250 300 350 -- -- -- Vdc 250 300 350 -- -- -- Vdc Vdc Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter - Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 NPN 2N6515 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 -- -- 50 50 -- -- -- 50 50 50 nAdc nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) -- -- -- -- VBE(sat) -- -- -- VBE(on) -- 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 -- -- -- -- -- -- 300 270 200 220 200 200 -- -- -- Vdc -- (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb -- -- 80 100 40 -- 200 6.0 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff -- -- 200 3.5 s s 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515 200 VCE = 10 V 200 TJ = 125C hFE, DC CURRENT GAIN VCE = -10 V PNP 2N6519 TJ = 125C 25C hFE, DC CURRENT GAIN 100 70 25C 100 70 50 - 55C - 55C 50 30 20 1.0 30 20 -1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 1. DC Current Gain 2N6517 200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 - 55C 30 20 25C TJ = 125C hFE , DC CURRENT GAIN 100 70 200 VCE = -10 V 2N6520 TJ = 125C 25C - 55C 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 2. DC Current Gain f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) 2N6515, 2N6517 2N6519, 2N6520 100 70 50 TJ = 25C VCE = - 20 V f = 20 MHz 30 20 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 3. Current-Gain -- Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 VCE(sat) @ IC/IB = 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C -1.4 -1.2 V, VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 - 50 - 70 -100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V TJ = 25C PNP 2N6519, 2N6520 Figure 4. "On" Voltages 2N6515, 2N6517 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) - 55C to 25C IC IB 2N6519, 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.0 1.5 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 -1.0 RVC for VCE(sat) - 55C to 125C RVB for VBE IC IB 2.5 + 10 25C to 125C + 10 25C to 125C - 55C to 25C - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 1.0 - 55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 5. Temperature Coefficients 2N6515, 2N6517 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb C, CAPACITANCE (pF) TJ = 25C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 - 0.2 2N6519, 2N6520 Ceb TJ = 25C Ccb Ccb 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 - 0.5 - 1.0 - 2.0 - 5.0 - 10 - 20 - 50 - 100 - 200 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 NPN 2N6515, 2N6517 1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C 1.0 k 700 500 300 200 100 70 50 30 20 10 -1.0 tr PNP 2N6519, 2N6520 td @ VBE(off) = 2.0 V VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 7. Turn-On Time 2N6515, 2N6517 10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 k ts ts 1.0 k 700 500 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 tf 2N6519, 2N6520 VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 8. Turn-Off Time Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 NPN 2N6515 2N6517 PNP 2N6519 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k +10.8 V 20 k 50 SAMPLING SCOPE APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 9. Switching Time Test Circuit r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 10. Thermal Response 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 500 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms FIGURE A tP PP PP t1 1/f DUTY CYCLE 1 + t1 f + ttP 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP Figure 11. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data NPN 2N6515 2N6517 PNP 2N6519 2N6520 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 NPN 2N6515 2N6517 PNP 2N6519 2N6520 Motorola reserves the right to make changes without further notice to any products herein. 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