![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting * High Gain MAXIMUM RATINGS IC VCES PDISS TJ T STG JC 1.25 A 45 V 14 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 12 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO hFE Cob PG C IC = 20 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 25 45 3.5 UNITS V V V --- IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz 15 7.0 10 50 12 55 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of PT9701B
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |