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| (R) 74V1G32 SINGLE 2-INPUT OR GATE s s s s s s s s HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 5.5V IMPROVED LATCH-UP IMMUNITY S (SOT23-5L) C (SC-70) ORDER CODE: 74V1G32S 74V1G32C The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. DESCRIPTION The 74V1G32 is an advanced high-speed CMOS SINGLE 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It has similar high speed performance of equivalent Bipolar Schottky TTL combined with true CMOS low power dissipation. PIN CONNECTION AND IEC LOGIC SYMBOLS September 1999 1/7 74V1G32 INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No 1 2 4 5 3 SYMBOL 1A 1B 1Y GND VCC NAME AND FUNCT ION Data Input Data Input Data Output Ground (0V) Positive Supply Voltage TRUTH TABLE A L L H H B L H L H Y L H H H ABSOLUTE MAXIMUM RATINGS Symbol VCC VI VO IIK IOK IO Tstg TL Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Storage Temperature Lead Temperature (10 sec) Parameter Value -0.5 to +7.0 -0.5 to +7.0 -0.5 to VCC + 0.5 - 20 20 25 50 -65 to +150 260 Unit V V V mA mA mA mA o o ICC or IGND DC VCC or Ground Current C C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. RECOMMENDED OPERATING CONDITIONS Symbol VCC VI VO Top dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time (see note 1) (VCC = 3.3 0.3V) (V CC = 5.0 0.5V) Parameter Valu e 2.0 to 5.5 0 to 5.5 0 to VCC -40 to +85 0 to 100 0 to 20 Unit V V V o C ns/V ns/V 1) VIN from 30% to70%of VCC 2/7 74V1G32 DC SPECIFICATIONS Symb ol Parameter T est Cond ition s V CC (V) VIH VIL VOH High Level Input Voltage Low Level Input Voltage High Level Output Voltage 2.0 3.0 to 5.5 2.0 3.0 to 5.5 2.0 3.0 4.5 3.0 4.5 VOL Low Level Output Voltage 2.0 3.0 4.5 3.0 4.5 II ICC Input Leakage Current Quiescent Supply Current 0 to 5.5 5.5 V I ( *) = V IH or VI L V I ( *) = V IH or VI L IO=-50 A IO=-50 A IO=-50 A IO=-4 mA IO=-8 mA IO=50 A IO=50 A IO=50 A IO=4 mA IO=8 mA VI = 5.5V or GND VI = VCC or GND 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 0.1 1 2.0 3.0 4.5 Min. 1.5 0.7VCC 0.5 0.3VCC 1.9 2.9 4.4 2.48 3.8 0.1 0.1 0.1 0.44 0.44 1.0 10 A A V V Typ . Value T A = 25 o C Max. -40 to 85 o C Min . 1.5 0.7VCC 0.5 0.3VCC Max. V V Un it (*) All outputs loaded. AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns) Symb ol Parameter V CC (V) tPLH tPHL Propagation Delay Time 3.3 3.3(*) 5.0(**) 5.0(**) (*) Test Co ndition Value T A = 25 o C Min. Typ . Max. 5.5 8.0 3.8 5.3 8.0 11.5 5.5 7.5 Un it -40 to 85 o C Min . Max. 1.0 1.0 1.0 1.0 9.5 13.0 6.5 8.5 ns (*) Voltage range is 3.3V 0.3V (**) Voltage range is 5V 0.5V CL CL CL CL = = = = 15 50 15 50 pF pF pF pF CAPACITIVE CHARACTERISTICS Symb ol Parameter T est Cond ition s Min. C IN CPD Input Capacitance Power Dissipation Capacitance (note 1) Typ . 4 14 Value T A = 25 o C Max. 10 -40 to 85 o C Min . Max. 10 pF pF Un it 1) CPD isdefined as the value of the IC'sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD * VCC * fIN + ICC/4 (per Gate) 3/7 74V1G32 TEST CIRCUIT CL = 15/50 pF or equivalent (includes jig and probe capacitance) RT = ZOUT of pulse generator (typically 50) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 4/7 74V1G32 SOT23-5L MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 1.9 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 21.6 DIM. 5/7 74V1G32 SC-70 MECHANICAL DATA mm MIN. A A1 A2 b C D E E1 L e e1 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 1.3 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 0.0 31.5 5.9 3.9 70.9 70.9 45.3 3.9 25.6 51.2 mils TYP. MAX. 43.3 3.9 39.4 11.8 7.1 86.6 94.5 53.1 11.8 DIM. 6/7 74V1G32 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 7/7 |
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