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| GF4412 N-Channel Enhancement-Mode MOSFET NCHT TRENFE GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 VDS 30V RDS(ON) 28m ID 7A (R) Dimensions in inches and (millimeters) 0.019 (0.48) x 45 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout 0- 8 Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Mounting Position: Any Weight: 0.5g Features * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) TA = 25C TA = 70C (1) Symbol VDS VGS TA = 25C TA = 70C ID IDM IS PD TJ, Tstg RJA Limit 30 Unit V 20 7 5.8 30 2.3 2.5 1.6 -55 to 150 50 A W C C/W 7/10/01 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface mounted on FR4 board, t 10 sec. GF4412 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Notes: (1) Pulse test; pulse width 300 s, duty cycle 2% Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VGS = 20V, VDS = 0V VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55C VDS 5V, VGS = 10V VGS = 10V, ID = 7A VGS = 4.5V, ID = 3.5A VDS = 15V, ID = 7A 30 1 - - - 30 - - - - - - - - - 20 29 16 - 3 V V nA A A m S 100 1 5 - 28 42 - Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 15V, ID = 2A VGS = 10V - - - - - - - - - - 16 2.2 2.4 6 5 25 7 810 150 75 23 - - 12 10 37 14 - - - pF ns nC VDD = 15V, ID = 1A VGEN = 10V, RG = 6 RL = 15 VDS = 15V VGS = 0V f = 1.0MHZ VSD IS = 2A, VGS = 0V - 0.75 1.3 V VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 30 VGS=10V 6.0 V 25 5.0 V 20 15 10 5 2.5V 0 0 1 2 3 4 0 1 2 3 4 5 4.5V 4.0V 25 30 VDS = 10V Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) ID -- Drain Current (A) 3.5V 20 15 TJ = 125C 10 --55C 5 25C 3.0V VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature 1.8 ID = 250A 0.04 0.035 0.03 1.6 Fig. 4 - On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) RDS(ON) -- On-Resistance () 1.4 1.2 VGS = 4.5V 5V 0.025 1 0.02 10V 0.015 0.01 0.8 0.6 --50 --25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 7A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.1 ID = 7A 0.08 10 Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 7A 8 RDS(ON) -- On-Resistance () 0.06 6 0.04 TJ = 125C 4 0.02 25C 0 2 4 6 8 10 2 0 0 2 4 6 8 10 12 14 16 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 - Capacitance 1000 Ciss 800 f = 1MHz VGS = 0V 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V 600 IS -- Source Current (A) C -- Capacitance (pF) 10 1 TJ = 125C 400 0.1 25C --55C 200 Crss 0 5 10 Coss 0 15 20 25 30 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GF4412 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 42 ID = 250A Fig. 11 - Transient Thermal Impedance BVDSS -- Breakdown Voltage (V) 41 40 39 38 37 36 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Fig. 12 - Power vs. Pulse Duration 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0.01 100 Fig. 13 - Maximum Safe Operating Area 10 0 ID -- Drain Current (A) 10 10 10 0m 1m ms s s RDS(ON) Limit 1 1s s 10s 0.1 VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25C 0.1 1 DC 10 100 VDS -- Drain-Source Voltage (V) |
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