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 Power Transistors
2SD1754, 2SD1754A
Silicon NPN triple diffusion planar type
Unit: mm
7.00.3 3.50.2
For power amplification with high forward current transfer ratio
7.20.3 0.80.2
3.00.2
1.00.2
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 80 100 60 80 6 6 3 1 15 1.3 150 -55 to +150 Unit V
10.0 -0.
+0.3
s Features
1.10.1 0.750.1
0.850.1 0.40.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1754 2SD1754A 2SD1754 Symbol VCBO VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
10.20.3 1.0 max.
Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature
V A A A
2.30.2 0.750.1 1.10.1
2.5
0.5 max.
0.90.1 0 to 0.15
1
2
3
W C C
4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1754 2SD1754A
(TC=25C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 30 60 80 500 1500 1 V MHz min typ max 100 100 100 100 Unit A A A V
Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1754 2SD1754A
VCEO hFE* VCE(sat) fT
Forward current transfer ratio Collector to emitter saturation voltage Transition frequency
*h
FE
Rank classification
Q P
Rank hFE
500 to 1000 800 to 1500
2.50.2
1.0
emitter voltage 2SD1754A
V
7.20.3
2.50.2
1.0
1
Power Transistors
PC -- Ta
20 1.0 (1) TC=Ta (2) Without heat sink (PC=1.3W) IB=1.2mA 1mA TC=25C
2SD1754, 2SD1754A
IC -- VCE
5
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
15
0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 0.1mA 0
Collector current IC (A)
(1)
0.8
4 TC=100C 3
25C
-25C
10
2
5
1
(2) 0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 25C -25C 10000
hFE -- IC
10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT -- IC
VCE=12V f=10MHz TC=25C
Forward current transfer ratio hFE
25C -25C 300 100 30 10 3 1 0.01 0.03
1000
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
TC=100C
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
10 I CP 3 1 10ms 0.3 0.1 0.03 0.01 1 3 10 30 IC 300ms t=1ms
102
(1) (2)
10
1
2SD1754A
2SD1754
100
300
1000
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2


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