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Semiconductor DN500 NPN Silicon Transistor Description * Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) * Suitable for low voltage large current drivers * Complementary pair with DP500 * Switching Application Ordering Information Type NO. DN500 Marking DN500 Package Code TO-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9086-002 1 DN500 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings 15 12 5 5 625 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat1) VBE(sat) fT C ob Test Condition IC =50A, IE=0 IC =1mA, IB=0 IE=50A, IC =0 VCB=15V, IE=0 VEB=4V, IC =0 VCE=2V, IC =500mA VCE=2V, IC =3A IC =3A, IB=150mA IC =3A, IB=150mA VCB=5V, IC =500mA VCB=10V, IE=0, f=1MHz Min. 15 12 5 160 40 - Typ. 150 - Max. 0.1 0.1 320 0.3 1.2 50 Unit V V V A A V V MHz pF KST-9086-002 2 DN500 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 Ic - VB E Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-9086-002 3 |
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