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| Surface Mount Switching Diode COMCHIP www.comchip.com.tw CDST 914 Voltage: 100 Volts Current: 200mA Features Fast Switching Speed Surface Mount Package Ideally Suite4d for Automatic Insertion .119 (3.0) .110 (2.8) .020 (0.5) SOT-23 Top View .056 (1.40) .047 (1.20) For General Purpose Switching Applications High Conductance 1 3 2 .006 (0.15)max. Mechanical Data Case: SOT -23, Plastic .037(0.95) .037(0.95) Approx. Weight: 0.008 gram .020 (0.5) .020 (0.5) 3 CATHODE 1 ANODE .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) Maximum Ratings Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Units VDC mAdc mAdc Thermal Characteristics Characteristic Total Device Dissipation FR- 5 Board(1) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R JA Max 225 1.8 556 300 2.4 417 -55 to +150 Units mW mW/C C/W mW mW/C C/W C PD R JA TJ, Tstg Electrical Characterics (TA = 25C unless otherwise noted) Characteristic (OFF CHARACTERISTICS) Reverse Breakdown Voltage ( I(BR) = 100 uAdc ) Reverse Voltage Leakage Current V R = 20 Vdc V R = 75 Vdc Diode Capacitance (VR = 0, f = 1.0 MHz)) Forward Voltage I F = 10 mAdc Reverse Recovery Time (IF = IR = 10 mAdc) 1.FR-5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina. Symbol V(BR) IR CT VF Trr Min 100 Max 25 50 4.0 1.0 4.0 Units Vdc nAdc uAdc pF Vdc nS MDS0210002A Page 1 .044 (1.10) .035 (0.90) Terminals : Solderable per NIL-STD -202, Method 208 .006 (0.15) .002 (0.05) Surface Mount Switching Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDST914) 820 +10 V 2.0 k 100 H 0.1 F DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscopes VR 90% IR 0.1 F tr 10% tp t IF IF trr t IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) Input Signal Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85C I F, Forward Current (mA) 10 TA = 150C TA = -40C IR , Reverse Current (A) 1.0 TA = 125C 10 TA = 25C 1.0 0.1 TA = 85C TA = 55C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, Forward Voltage (V) TA = 25C 0.001 0 10 20 30 40 50 VR, Reverse Voltage (V) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 VR, Reverse Voltage (V) 6.0 8.0 Figure 4. Capacitance MDS0210002A Page 2 |
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